PART |
Description |
Maker |
PPF360M |
N Channel MOSFET; Package: TO-254; ID (A): 14; RDS(on) (Ohms): 0.2; PD (W): 200; BVDSS (V): 400; Rq: 0.63; 23 A, 400 V, 0.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA
|
Microsemi, Corp.
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NPC50-100G-50R0G NPC50-50G-50R0F NPC50-50G-50R0J N |
0 MHz - 4000 MHz 50 ohm RF/MICROWAVE TERMINATION 0 MHz - 10000 MHz 50 ohm RF/MICROWAVE TERMINATION 0 MHz - 12400 MHz 50 ohm RF/MICROWAVE TERMINATION 0 MHz - 12400 MHz 100 ohm RF/MICROWAVE TERMINATION 0 MHz - 400 MHz 50 ohm RF/MICROWAVE TERMINATION 0 MHz - 400 MHz 100 ohm RF/MICROWAVE TERMINATION 0 MHz - 2500 MHz 50 ohm RF/MICROWAVE TERMINATION
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Marktech Optoelectronics Ecliptek, Corp. Daishinku, Corp. Electronic Theatre Controls, Inc. 飞思卡尔半导体(中国)有限公司 Pulse Engineering, Inc. HIROSE ELECTRIC Co., Ltd.
|
FRK460D FRK460H FRK460R FN3238 |
17A/ 500V/ 0.400 Ohm/ Rad Hard/ N-Channel Power MOSFETs 17A, 500V, 0.400 Ohm, Rad Hard, N-Channel Power MOSFETs From old datasheet system
|
INTERSIL[Intersil Corporation]
|
IRF730 |
5.5 A, 400 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
VISHAY SILICONIX
|
BUZ32 |
9.5A, 200V, 0.400 Ohm, N-Channel Power MOSFET
|
INTERSIL[Intersil Corporation]
|
SIHF740STRL-GE3 |
10 A, 400 V, 0.55 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
|
VISHAY SILICONIX
|
IRFR320BTM IRFR320BTF |
3.1 A, 400 V, 1.75 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
|
FAIRCHILD SEMICONDUCTOR CORP
|
IRF730 |
5.5 A, 400 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
VISHAY INTERTECHNOLOGY INC
|
IRF710 FN2310 |
2.0A, 400V, 3.600 Ohm,N-Channel PowerMOSFET(2.0A, 400V, 3.600 Ohm,N娌??澧?己?????OS?烘?搴??) From old datasheet system 2.0A, 400V, 3.600 Ohm, N-Channel Power MOSFET 2 A, 400 V, 3.6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
HARRIS SEMICONDUCTOR Intersil Corporation
|
IRF720 |
400 Volt, 1.8 Ohm HEXFET TO-220AB Plastic Package
|
New Jersey Semi-Conductor P...
|
MTW16N40E |
TMOS POWER FET 16 AMPERES 400 VOLTS RDS(on) = 0.24 OHM
|
MOTOROLA[Motorola, Inc]
|
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